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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Details
Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Resource
Electronics Letters
Journal
Electronics Letters
Journal Volume
40
Journal Issue
3
Pages
179-180
Date Issued
2004-02
Author(s)
Chang, F.Y.
Lee, J.D.
HAO-HSIUNG LIN
DOI
10.1049/el:20040127
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/310413
SDGs
[SDGs]SDG7
Type
journal article
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Name
01267537.pdf
Size
195.15 KB
Format
Adobe PDF
Checksum
(MD5):ff1e3483ae5817b5a4835064643ac8e0
