Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's
Journal
IEEE MTT-S International Microwave Symposium Digest
Journal Volume
3
Pages
1191-1194
Date Issued
1999-06
Author(s)
Abstract
Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.
Event(s)
Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'
Other Subjects
Multifinger devices; X-band operation; Electric potential; Fabrication; Gain measurement; Molecular beam epitaxy; Semiconducting silicon; Heterojunction bipolar transistors
Type
conference paper