Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period
Journal
CLEO: Applications and Technology
Date Issued
2015
Author(s)
CHIEH-HSIUNG KUAN
Chen, P.-H.
Su, V.-C.
Lee, M.-L.
You, Y.-H.
Chen, Y.-P.
Hung, Z.-H.
Hsu, T.-C.
Lin, Y.-Y.
Lin, R.-M.
CHIEH-HSIUNG KUAN
Abstract
The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.
Type
conference paper