A Novel Process for Growing Gate Aluminum Oxide in Amorphous Silicon Thin Film Transistor
Journal
Journal of the Electrochemical Society
Journal Volume
142
Journal Issue
12
Pages
L228-L229
Date Issued
1995
Author(s)
Lin, K.-C.
Abstract
Hydrogenated amorphous silicon thin film transistor with inverted staggered structure is fabricated using a novel chemical treatment process for growing gate aluminum oxide. The Al gate is treated by water solution at 60°C and annealed at 400°C in the environment before the deposition of thin film transistor by plasma‐enhanced chemical vapor deposition. The off‐current of the transistor is in the picoampere range and on‐off current ratio exceeds . The highest field effect mobility achieved in the linear region is 0.28 cm2/V‐s and the subthreshold swing is 1.1 V/decade.
SDGs
Type
journal article