Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
Journal
Nanoscale Research Letters
Journal Volume
9
Journal Issue
1
Date Issued
2014
Author(s)
CHIEH-HSIUNG KUAN
You, Y.-H.
Su, V.-C.
Ho, T.-E.
Lin, B.-W.
Lee, M.-L.
Das, A.
Hsu, W.-C.
Kuan, C.-H.
Lin, R.-M.
CHIEH-HSIUNG KUAN
Abstract
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
Type
journal article