Asymmetric keep-out zone of through-silicon via using 28-nm technology node
Journal
IEEE Electron Device Letters
Journal Volume
36
Journal Issue
9
Pages
938-940
Date Issued
2015
Author(s)
Yan, J.-Y.
Jan, S.-R.
Huang, Y.-C.
Lan, H.-S.
Huang, Y.-H.
Hung, B.
Chan, K.-T.
Huang, M.
Yang, M.-T.
Type
journal article