High-operating Current ZnO Based Thin Film Transistors with a Bi-layer ZnO/GZO Channel
Journal
ECS Transactions
Date Issued
2009
Author(s)
Abstract
A high-operating current ZnO based thin film transistor on glass substrate is demonstrated by inserting a thin but high-carrier density Ga-doped ZnO (GZO) layer in between two ZnO layers. The device shows a drain-source current 3.4mA at VGS=5V and VDS=14V, which is significantly higher than that of the conventional one. The improvement of the current level is due to the insertion of the GZO layer, which serves as a source to supply additional carriers to the channel layer. Also, the threshold voltage of the device becomes smaller, but remains in the enhancement mode. This result shows our proposed structure has the advantage of adjusting threshold voltages.
SDGs
Type
conference paper