Switching between transverse electric and magnetic mode in InAs/AlGaAs/GaAs quantum dot infrared photodetector
Resource
Nanotechnology, 2005. 5th IEEE Conference on
Journal
5th IEEE Conference on Nanotechnology
Pages
-
Date Issued
2005-07
Date
2005-07
Author(s)
DOI
N/A
Abstract
By introducing a 2-nm-Al/sub 0.3/Ga/sub 0.7/As capping layer on the InAs quantum dots, a transverse electric (TE) field dominant response in quantum dot infrared photodetector (QDIP) has been achieved. The TE enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain on the quantum dot. After rapid thermal annealing (RTA), the compressive strain changes. Therefore, the TE favorite peaks can be changed to transverse magnetic (TM) field enhanced and vice versa.
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
01500691.pdf
Size
376.11 KB
Format
Adobe PDF
Checksum
(MD5):aa5ce32bd86a2987557233453356bd15