Optical spectroscopic investigation of InGaN/GaN multiple quantum well light emitting diode wafers grown on sapphire by metalorganic chemical vapor deposition
Journal
Journal of Physics: Conference Series
Journal Volume
28
Journal Issue
1
Pages
42-47
Date Issued
2006
Author(s)
Abstract
InGaN/GaN multiple quantum well structures have been grown on sapphire substrates by metalorganic chemical vapor deposition, for wide range visible light emitting diode application. The compositions and sizes within quantum wells were designed according to the requirements on the LED performance. Samples were investigated by a variety of characterization techniques. Optimization of the growth parameters and process was realized and evidenced by high resolution X-ray diffraction measurements. Optical spectroscopic properties were further studied and quantum confined stokes shift was observed from room temperature photoluminescence and photoluminescence excitation measurements.
Publisher
Institute of Physics Publishing
Type
journal article