Bipolar-FET Combinational Power Transistors for Power Conversion Applications
Journal
IEEE Transactions on Aerospace and Electronic System
Journal Volume
AES-20
Journal Issue
5
Pages
659-644
Date Issued
1984-09
Author(s)
S. Chin
Abstract
Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT). © 1984 IEEE
Subjects
ELECTRIC CONVERTERS, STATIC; TRANSISTORS, BIPOLAR; BIPOLAR-FET COMBINATIONAL POWER TRANSISTORS; CASCADE CONFIGURATION; CASCODE CONFIGURATION; POWER CONVERSION APPLICATIONS; TRANSISTORS, FIELD EFFECT
SDGs
Type
journal article