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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
Details
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
Journal
Hong Kong Electron Devices Meeting
Pages
1-4
Date Issued
2002-06
Author(s)
J. B. Kuo
S. C. Lin
JAMES-B KUO
DOI
10.1109/hkedm.2002.1029144
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/299089
Type
conference paper
