Influence of Device Structures on Current-injection Microdisk Laser Characteristics
Date Issued
2013
Date
2013
Author(s)
LEE, I
Abstract
Our laboratory has successfully fabricated current-injection microdisk lasers using five-layer InGaAs quantum dots as active medium. They can be operated at 300K in pulsed mode. The threshold current of a 6.5 um diameter microdisk laser is 0.45mA, and the characteristic temperature is 107K. In this thesis, we fabricated microdisk lasers using the same active material but with increased thickness of p-side metal. The threshold current can be further reduced to 0.18mA at 300K, and the characteristic temperature rose to 216K. Quality factor is about 3400. In addition, continuous mode operation was first used and the highest temperature where lasing could still be achieved is 220K with threshold current of 1.8mA. The effect of p-side metal thickness on characteristics of microdisk lasers will be discussed.
Furthermore, we also fabricated microdisk lasers using different active layer. We use three-layer InAs quantum dots as active medium. The thickness of spacer between quantum dot layers is increased from 10nm to 35nm. We also discussed the influence of spacer thickness and number of stacks on carrier lifetime and threshold current. The highest temperature of a 7.8 um microdisk laser from which lasing could still be achieved is 260K with threshold current of 0.48mA, and the characteristic temperature is about 195K.
Subjects
量子點
微碟型
雷射
電注入
Type
thesis
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