Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film
Journal
Optics Express
Journal Volume
28
Journal Issue
9
Pages
13542-13552
Date Issued
2020
Author(s)
Abstract
Optical memories are vitally important for the future development of high speed and low cost information technologies. Current optical memory devices still suffer from difficulties such as scaling-down of size, short-life expectancy, and non-volatility without the control of a gate electrode. To resolve these obstacles, a robust photoelectronic memory device is designed and demonstrated based on the integration of amorphous InGaZnO (a-IGZO), GNSs, and nitride multiple-quantum-wells light-emitting diode (MQWs LED). Utilizing the inherent nature of the band alignment between a-IGZO and graphene nanosheets (GNSs), electrons can transfer from a-IGZO to GNSs causing a persistent photoconductivity (PPC). With the long-lasting lifetime of PPC, the signal can be written optically and the encoded signal can be read both electrically and optically. The read and write processes reveal little current degradation for more than 10,000 sec, even repeated for more than hundred times. The device can convert invisible information to visible signal, and the encoded information can be simply erased under a reversed bias without a gate electrode. In addition, the memory device possesses a simple vertically stacked structure for 3D integration, and it is compatible with established technologies. ? 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Other Subjects
Electrodes; Gallium compounds; Graphene; Nitrides; Refractory metal compounds; Semiconducting indium compounds; Zinc compounds; Amorphousingazno (a-igzo); Current degradation; Encoded information; Graphene nanosheets; Invisible information; Life expectancies; Persistent Photoconductivity; Stacked structure; Semiconductor quantum wells
Type
journal article