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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
N-channel SnOx thin-film transistors via oxidation effect from Al2O3 capping layer for complementary inverters
Details
N-channel SnOx thin-film transistors via oxidation effect from Al2O3 capping layer for complementary inverters
Journal
Optics & Photonics Taiwan, International Conference 2016
Pages
SW1F.7
Date Issued
2016
Author(s)
H.-L. Yang
Y.-S. Li
Y.-A. Shih
S.-M. Hsu
I-C. Cheng
I-CHUN CHENG
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/429499
Type
conference paper
