Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals
Resource
Journal of Luminescence, 130(8), 1485-1488
Journal
Journal of Luminescence
Journal Volume
130
Journal Issue
8
Pages
1485-1488
Date Issued
2010
Date
2010
Author(s)
Abstract
The characteristics of temperature-dependent photoluminescence (PL) from Si nanocrystals and effects of arsenic-doping (As-doping) were investigated. The Si nanocrystals on a p-type Si substrate were prepared by low pressure chemical vapor deposition and post-deposition thermal oxidation. The As-doping process was carried out using the gas-phase-doping technique. Temperature-dependent PL from Si nanocrystals exhibited considerable differences between samples with/without As-doping. Phase transition between electronhole liquid and free exciton was observed in the undoped Si nanocrystals, leading to the increase in PL intensity with temperature less than 50 K. Electron emission from As-doped Si nanocrystals to the p-Si substrate was responsible for the significant increase in PL intensity with temperature greater than 50 K. Characteristics of light emission from Si nanocrystals will facilitate the development of silicon-based nanoscaled light-emitting devices. © 2010 Elsevier B.V.
Type
journal article
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