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  4. Study of thermoelectric properties of InGaN/GaN superlattice
 
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Study of thermoelectric properties of InGaN/GaN superlattice

Journal
Materials Research Society Symposium Proceedings
Journal Volume
1329
Pages
20-25
Date Issued
2011
Author(s)
Huang H.-H
YUH-RENN WU  
DOI
10.1557/opl.2011.1235
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860148150&doi=10.1557%2fopl.2011.1235&partnerID=40&md5=7527cff576e89d7a74b6765a157554c6
https://scholars.lib.ntu.edu.tw/handle/123456789/632067
Abstract
As many reports show that the superlattice structure could greatly enhance the figure of merit ZT value for the thermoelectric application. We studied the ther-mal and electrical properties of the InGaN/GaN superlattice structure, and further analyze the thermoelectric features with different superlattice period, doping con-centration, and operation temperature. The elastic continuum model and Callaway model have been applied to calculate the phonon dispersion relation and the thermal conductivity, respectively. The electrical properties are obtained by the Boltzmann transport equation with the relaxation time approximation. Simulation results indi-cate that both the reduced thermal conductivity and enhanced power factor would have the contribution to the enhancement of the figure of merit ZT. © 2011 Materials Research Society.
Other Subjects
Boltzmann transport equation; Callaway model; Elastic continuum; Figure of merits; InGaN/GaN; Operation temperature; Phonon dispersions; Power factors; Relaxation time approximation; Super-lattice structures; Superlattice periods; Thermoelectric application; Thermoelectric properties; Continuum mechanics; Electric power factor; Electric properties; Superlattices; Thermoelectricity; Thermal conductivity
Type
conference paper

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