Monolithic InGaP-GaAs HBT receiver front-end with 6mW DC power consumption for 5 GHz band WLAN applications
Date Issued
2004-11
Date
2004-11
Author(s)
Yeh, K.Y.
Lu, S.S.
Lin, Y.S.
DOI
20060927122737679250
Abstract
A very low power consumption (6 mW) 5 GHz band receiver frontend
using InGaP-GaAs HBT technology is reported. The receiver
front-end is composed of a cascode low noise amplifier followed by a
double-balanced mixer with the RF transconductor stage placed above
the Gilbert quad for direct-coupled connection. The RF band of this
receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz
IF frequency. Input-return-loss (S11) in RF port smaller than 12 dB
and excellent power-conversion-gain of 35.4 dB are achieved. Input
1 dB compression point (P1dB) and input third-order intercept point
(IIP3) of 24 and 3 dBm, respectively, are also achieved.
Publisher
臺北市:國立臺灣大學電機工程學系
Type
thesis
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