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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Low-Voltage Content Addressable Memory Cell with a Fast Tag-Compare Capability Using Partially-Depleted SOI CMOS Dynamic-Threshold Techniques
Details
Low-Voltage Content Addressable Memory Cell with a Fast Tag-Compare Capability Using Partially-Depleted SOI CMOS Dynamic-Threshold Techniques
Date Issued
2001-05
Author(s)
J. B. Kuo
S. C. Liu
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/294331
Type
patent