A 128.24-to-137.00GHz injection-locked frequency divider in 65nm CMOS
Journal
International Solid-State Circuits Conference
Pages
282-283
Date Issued
2009-02
Author(s)
Abstract
Owing to the nanoscale CMOS technology, mm-wave circuits have been recently attracting a lot of attention for communication, sensing and imaging systems. Several mm-wave components with operation frequencies around or more than 100GHz have been reported [1–7]. The frequency divider is one of the key building blocks in wireless transceivers. Several W-Band (75 to 110GHz) and D-Band (90 to 140GHz) ILFDs [3–6] and static dividers [7] have been presented. In this work, a 128.24-to-137.00GHz CMOS ILFD with split-injection and split-cross-coupled pair is presented for D-Band applications.
SDGs
Type
conference paper