Charge-based capacitance measurement for bias-dependent capacitance
Journal
IEEE Electron Device Letters
Journal Volume
27
Journal Issue
5
Pages
390-392
Date Issued
2006
Author(s)
Abstract
In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions.
SDGs
Type
journal article