Infrared proximity sensor using organic light-emitting diode with quantum dots converter
Journal
Organic Electronics
Journal Volume
13
Journal Issue
11
Pages
2312-2318
Date Issued
2012
Author(s)
Chen, E.-C.
Yeh, H.-C.
Chao, Y.-C.
Meng, H.-F.
Zan, H.-W.
Liang, Y.-C.
Huang, C.-P.
Chen, T.-M.
Wang, C.-F.
Horng, Sheng-Fu
Abstract
An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal. © 2012 Elsevier B.V. All rights reserved.
SDGs
Publisher
Elsevier B.V.
Type
journal article