Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
Journal
IEEE International Symposium on Compound Semiconductors, 1997
Pages
319-324
Date Issued
1997
Author(s)
Ren, F
Hobson, WS
Kuo, JM
Kwo, J
Mannaerts, JP
Lothian, JR
Marcus, MA
Liu, CT
Sergent, AM
others
Type
conference paper