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College of Science / 理學院
Geosciences / 地質科學系
Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular-beam epitaxy
Details
Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular-beam epitaxy
Journal
Journal of Applied Physics
Journal Volume
69
Journal Issue
5
Pages
3360-3362
Date Issued
1991
Author(s)
YANG-FANG CHEN
WEN-SHAN CHEN
DOI
10.1063/1.348533
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0038995549&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/292851
Type
journal article
