A 86 to 108 GHz Amplifier in 90 nm CMOS
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
18
Journal Issue
2
Pages
124--126
Date Issued
2008-02
Author(s)
Abstract
This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date. © 2008 IEEE.
SDGs
Type
journal article