光纖通訊應用光電元件製作及數值模擬-子計畫四:含氮化 合物半導體的磊晶成長與元件應用
Date Issued
2002-07-31
Date
2002-07-31
Author(s)
DOI
902215E002030
Abstract
In this report, we investigated two
III-V-N alloys, namely InGaAsN and InAsN.
All the III-V-N samples were grown by RF
plasma assisted gas source molecular beam
epitaxy (GSMBE). For the investigations on
the InAsN material, the optical transitions in
InAs1-xNx/In0.53Ga0.47As single and multiple
quantum wells (QW) heterostructures have
been studied using low-temperature
photoluminescence (PL). The PL peak
energies decreases as nitrogen content
increases, showing a bowing effect due to
the incorporation of nitrogen atoms into the
InAs lattice. Theses PL peak energies are in
good agreement with the theoretical
calculation using a finite-depth square-well
method which takes into account the effects
of strain, quantized confinement, band-gap
narrowing, and the anti-crossing interaction
between the InAs conduction band and a
higher-lying N localized state [Shan et al.:
Phys. Rev. Lett. 82 (1999) 1221]. We also
showed that the electron effective mass of
InAsN is greater than that of InAs with same
well width and increases with increasing N
content in the studied N range. Finally, the
estimated experimental and theoretical
transition energy shrinkage coefficients were
-16.8 and meV/at % N and -19.4 meV/at %
N, respectively, both similar to our previous
result, -14.7 meV/at % N, from the Fourier
transform absorption spectroscopy at 300 K
in InAs1-xNx bulk films.
Secondly, on the investigations of
InGaAsN alloy, we grew 1.3mm InGaAsN/
GaAs QW lasers. The fabricated broad area
uncoated Fabry-Perot laser demonstrates a
threshold current density of 1.46 kA/cm2 at
room temperature. The internal quantum
efficiency for this laser is 72 %, and the material loss is 6.2 cm-1.
Subjects
InGaAsN
InAsN
RF plasma
assisted gas-source MBE
assisted gas-source MBE
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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