Enhanced Electrical Performance of Ultrathin Body Nanosheets
Part Of
2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024
Journal Volume
69
Start Page
7
End Page
8
ISBN (of the container)
979-835039163-3
Date Issued
2024-06-15
Author(s)
Bo-Wei Huang
Yu-Rui Chen
Tao Chou
Hsin-Cheng Lin
Chien-Te Tu
Yi-Chun Liu
Wan-Hsuan Hsieh
Wei-Jen Chen
Min-Kuan Lin
Ying-Qi Liu
Li-Kai Wang
Hung-Chun Chou
Yi Huang
Ding-Wei Lin
Abstract
Ultrathin body has the immunity to subthreshold swing (SS) degradation by doping and Dit, approaching the ideal SS of 60mV/dec. The large effective bandgap (Eg) by the quantum confinement results in high ION/IOFF. The large Eg weakens the impact ionization to improve the high breakdown voltage. The Ge0.9Sn0.1 ultrathin bodies are realized by co-optimization between CVD epitaxy and etching. The nearly ideal SS of 64mV/dec is achieved. The compressive strain of GeSn channel after channel release increases with decreasing body thickness. The ~2nm ultrathin body has a compressive strain of 3.3%. The high breakdown voltage of 11.7V is also achieved, as compared to 6V breakdown voltage of 10nm nanosheets.
Event(s)
2024 IEEE Silicon Nanoelectronics Workshop
SDGs
Publisher
IEEE
Type
conference paper