Local hydrogen reactions of H*2 in a-Si:H
Journal
Journal of Non-Crystalline Solids
Journal Volume
227-230
Journal Issue
PART 1
Pages
138-142
Date Issued
1998
Author(s)
Abstract
Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.
SDGs
Publisher
Elsevier
Type
journal article