Using N-Type Organic Material with Photoconductivity for Low Reflectance OLEDs
Resource
Proceedings of SPIE 6333: 63331Q
Journal
Proceedings of SPIE
Pages
-
Date Issued
2006
Date
2006
Author(s)
Chuang, Kai-Hsiang
Ho, Yu-Hsuan
Chao, Chun-Chieh
Li, Cheng-Yu
Abstract
In this paper, we have demonstrated a low-reflectance organic light-emitting device (OLED) by inserting a perylene diimide derivative between the emitting layer (EML) and the cathode. Such a material exhibits a good electron transport capability and good photoconductivity which absorbs light. A semi-transparent layer composed of thin aluminum (Al) and silver (Ag) was used between the EML and the n-type organic material, a perylene diimide derivative, for better electron injection and efficient destructive interference. The J-V characteristics of our low reflection and the control one are nearly identical which shows the superior conductivity of this material. In addition, the absorption peak of this n-type organic material is near 550 nm and is strong enough to absorb nearly half of the ambient visible light. Furthermore, through either interference destruction or directly self-absorption, the photocurrent is generated from the N-type organic material. Thus, this device can also be applied as a photodetector or the applications of the self-adjustable display under different ambient illumination with suitable driving scheme.
SDGs
Other Subjects
Current voltage characteristics; Derivatives; Electron transport properties; Light absorption; Light emitting diodes; Photoconductivity; Photocurrents; Photodetectors; Electron injection; Low reflection; Organic light-emitting device; Perylene diimide derivatives; Organic superconducting materials
Type
conference paper
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