Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure

Journal

Materials Chemistry and Physics

Journal Volume

184

Pages

291-297

Date Issued

2016

Author(s)

Wang W.-C.

Tsai M.-C.

Lin Y.-P.

Tsai Y.-J.

Lin H.-C.

DOI

10.1016/j.matchemphys.2016.09.054

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84992754203&doi=10.1016%2fj.matchemphys.2016.09.054&partnerID=40&md5=846d5f77d905447fcbfa6a98581b0786

https://scholars.lib.ntu.edu.tw/handle/123456789/432414

Publisher

Elsevier Ltd

Type

journal article