Development of Inkjet-Printed Complementary Organic Thin Film Transistor Device
Date Issued
2014
Date
2014
Author(s)
Chen, Chia-Cheng
Abstract
Wearable technology has become one of the most prevalent trends on the market. Many research teams have delved into the possibility of making electronic products on flexible substrates, such as flexible displays, electronic papers, flexible phones, organic solar cells and organic RFID circuits, etc. Among these applications, the complementary organic thin film transistors are the basic components used for the fabrication. In the past decade, the development of the N type and P type organic has grown mature. The fabrication of organic thin film complementary type has moved from traditional method to solution method. Finding a way to utilize the advantages of solution based fabrication such as low cost, low temperature while also maintaining the electrical properties of the traditional method has become a major topic of interest. In this paper our group has set up an inkjet printing system that is operating under atmospheric environment. The source electrode material as gold has been inkjet-printed semiconductor materials P3HT and P(NDI2OD-T2) for fabricating complementary thin film transistor. Furthermore, PEDOT:PSS has been inkjet-printed as the gate electrode to lower the cost. The Complementary OTFT could provide a gain of up to -2.4. In the future we will attempt to utilize the inkjet printing technology to develop an all inkjet printed organic integrated circuit. Using the Complementary OTFT covered in this research we can develop ring oscillators, logic gates and other advanced circuits. Improving the yield rate and the switching voltage value to be VDD/2 is also in our research plans.
Subjects
Organic electronics
ink-jet printing
organic thin film transistor
complementary
Type
thesis
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ntu-103-R01943109-1.pdf
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