Optimization of the Output Efficiency of GaN Nanowire Piezoelectric Nanogenerators by Tuning the Free Carrier Concentration
Journal
ADVANCED ENERGY MATERIALS
Journal Volume
4
Journal Issue
16
Date Issued
2014
Author(s)
Abstract
Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations.
Subjects
PERFORMANCE; GENERATION; BARRIER; LIGHT; ARRAY
SDGs
Publisher
WILEY-V C H VERLAG GMBH
Type
journal article