Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs
Resource
IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(8), 2033-2036
Journal
IEEE Transactions on Electron Devices
Pages
2033-2036
Date Issued
2012
Date
2012
Author(s)
Type
journal article
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