Temperature dependence and the effect of hydrogen peroxide on ITO/poly-ZnO Schottky diodes fabricated by laser evaporation
Journal
Current Applied Physics
Journal Volume
13
Journal Issue
7
Pages
1325-1330
Date Issued
2013
Author(s)
Abstract
Transparent and efficient poly-ZnO ultraviolet Schottky diodes grown at different temperatures with indium-tin-oxide (ITO) as the metallic contact layer were fabricated with hydrogen peroxide (H2O2) applied as a surface treatment at 70°C for 20 min. Analysis via field-emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the ZnO films underwent gradual oxidation and that H 2O2 treatment resulted in an interfacial ZnO2 layer that covered the ZnO surface. I-V measurements indicated that the ideality factor and the Schottky barrier height improved with increasing shunt resistance, and the trade-off between film quality and the degree of oxidation revealed that films grown at 400°C exhibited the best diode characteristics. © 2013 Elsevier B.V. All rights reserved.
Type
journal article