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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL
Details
Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL
Journal
2019 IEEE Photonics Conference, IPC 2019 - Proceedings
Date Issued
2019
Author(s)
Shih, H.-Y.
Wu, C.-H.
DOI
10.1109/IPCon.2019.8908386
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85075905996&partnerID=40&md5=12a4c8e9b6a2a9c0cd85f61f8656ee4a
https://scholars.lib.ntu.edu.tw/handle/123456789/549193
SDGs
[SDGs]SDG7
Type
conference paper
