Synchrotron Radiation X-ray Absorption and X-ray Photoelectron Spectroscopy Analysis of MgZnO, HfO2, and InAsPSb epitaxial materials
Date Issued
2010
Date
2010
Author(s)
Lan, You-Ren
Abstract
During the past decade, synchrotron light sources have become indispensable tools for advanced scientific research. Synchrotron light is used widely in basic and applied research throughout the fields of materials science, biology, medicine, physics, chemistry, chemical engineering, geology, energy, electronics, and nanotechnology. A series of optical characterization techniques, including X-ray absorption spectroscopy (XAS), X-ray Photoelectron Spectroscopy (XPS), Raman scattering, and X-ray diffraction (XRD) were employed to analyze II-VI and III-V compound semiconductors.
In chapter 3, we study the structural and electrical properties of MgxZn1-xO materials with wurtzite structure grown on sapphire substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). MgxZn1-xO samples with different composition ratios were analyzed by various characterization techniques, including XPS, Synchrotron Radiation (SR) X-ray absorption fine structure (XAFS), XRD, and Raman scattering.
We investigate on the structural and optical characteristics of nanometer scale HfO2 thin film materials epitaxied on Si substrates with different growth condition, by XPS, Rutherford back-scattering (RBS), SR-XAFS, and grazing incidence x-ray diffraction (GIXRD) in chapter 4.
In chapter 5, it is focused on the InAsPSb thick epitaxial films grown on GaAs substrate by gas source molecular beam epitaxy (GSMBE). InAsPSb samples with different growth condition were investigated by XPS and SR-XAFS.
Subjects
Synchrotron Radiation (SR)
X-ray absorption fine structure (XAFS)
X-ray absorption spectroscopy (XAS)
X-ray Photoelectron Spectroscopy (XPS)
MgZnO
HfO2
InAsPSb
Type
thesis
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