High efficiency and long lifetime OLED based on a metal-doped electron transport layer
Resource
Chemical Physics Letters 416 (4-6): 234-237
Journal
Chemical Physics Letters
Journal Volume
416
Journal Issue
4-6
Pages
234 - 237
Date Issued
2005
Date
2005
Author(s)
Abstract
The OLED performance of cesium (Cs) doped 4,4′-bis(5-phenyl-[1,3,4] oxadiazol-2-yl)-2,2′-dinaphthylbiphenyl (bis-OXD), a metal-doped electron transport layer, is reported. Device lifetime increases because: (1) Cs is heavy and difficult to diffuse in an organic matrix, and (2) The host material, bis-OXD, exhibits a high glass-transition temperature (Tg) of 147 °C. The average roughness of the thin film is small hence the leakage current of the corresponding OLED devices is low. By using a silver cathode, an OLED with a 2.59 V reduction in driving voltage, a 47.3% increase in current efficiency, and a 3.14 times enhancement in operation lifetime was demonstrated. © 2005 Elsevier B.V. All rights reserved.
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