Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
Journal
Japanese Journal of Applied Physics, Part 2: Letters
Journal Volume
31
Journal Issue
5 B
Date Issued
1992
Author(s)
Chang-Liao, Kuei-Shu
Abstract
The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (OF) and rapid thermal oxide (OR) as starting oxides are investigated. It is found that the RNO structure which uses OF as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure OR as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed. © 1992 IOP Publishing Ltd.
Subjects
Rapid thermal process; Reoxidized nitrided oxide
Other Subjects
Oxides - Applications; Oxides - Interfaces; Oxides - Thermal Effects; Rapid Thermal Process; Reoxidized Nitrided Oxide; Semiconductor Devices
Type
journal article