Continuous-wave and time-resolved photoluminescence of GaN LED grown on amorphous SiC buffer
Journal
Optics InfoBase Conference Papers
ISBN
9780960038008
Date Issued
2016-01-01
Author(s)
Abstract
GaN LED grown upon amorphous SiC buffer is demonstrated. Its PL peak is redshifted to 442 nm because of the decreased compressive strain induced by lattice mismatch when changing the SiC buffer to C-rich condition.
Type
conference paper