Poly-Silicon Nanowire FET Chemical Sensor
Resource
Proceedings of ASME 2010 First Global Congress on NanoEngineering for Medicine and Biology, Houston, Texas
Journal
ASME 2010 First Global Congress on NanoEngineering for Medicine and Biology
Pages
19-20
Date Issued
2010
Date
2010
Author(s)
Abstract
Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.
Type
conference paper