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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs
Details
The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs
Journal
Third International SiGe Technology and Device Meeting, ISTDM 2006
Journal Volume
2006
Date Issued
2006
Author(s)
CHEE-WEE LIU
Lee, M.H.
Chang, S.T.
Maikap, S.
Yu, C.-Y.
CHEE-WEE LIU
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-34247491162&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/324153
Type
conference paper