Enhancement of Silicon Light Emission with Si/SiGe Quantum Well Structure
Date Issued
2006
Date
2006
Author(s)
Chiu, Chien-Wei
DOI
zh-TW
Abstract
The advantage of the optoelectronic component of Silicon Germanium is fully compatible with the Si-based microelectronic chips. In addition, the progress of the growth techniques for quantum hetero-junction structure is in advanced. So the hetero-junction structure of Silicon Germanium is studied far and wide in recent years. In this thesis, a method with band bending effect to enhance silicon light emission was proved successfully by real fabricated devices and theoretical simulation results. Within simulation, we could know detail physical phenomenon which could not be observed in the lab easily. By comparing the simulation result and experiment data, we could improve our simulation accuracy and simulation result would help us to build a reliable physical model.
We used TCAD simulator named ATLAS which was developed by SILVACO. For experiment, we designed a LED with ten periods Si/SiGe MQW and grew it by UHVCVD system. After processing, we could get I-V data and EL spectrum. We utilized ATLAS to simulate this device and ATLAS let us to know insight physics. From the experiment data, Silicon light intensity increased as injection current is increased at room temperature. By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure. As injection current is increased; a barrier was formed at the hetero-junction because of band bending effect. This barrier would block hole to flow into wells and then a lot of hole would be accumulated at the top Silicon buffer layer. Thus recombination rate at this layer would increase and Silicon light intensity would increase simultaneously.
Subjects
增加矽的發光強度
矽鍺多重量子井之發光二極體
Enhancement of Silicon Light Emission
Si/SiGe MQW structure
Type
thesis
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