Evaluation and Research the Diffractive Optical Elements applying to Far-Field Diffractive Lithography
Date Issued
2005
Date
2005
Author(s)
Hsu, Hsiang-Yu
DOI
zh-TW
Abstract
A new maskless optical lithography based on far-field diffractive lithography is proposed and evaluated in this thesis to achieve the sub wave-length results resolution enhancement method.
In this thesis, the near-field perturbation of light passing through a phase mask was developed on a positive photoresist (s1813). The experiment will be used to obtain insights into the perturbation. A simulated far-field perturbation generated by a continuous-phase diffractive optical element (DOE) was attempted to achieve with the near-field perturbation obtained on the photoresist.
The near-field lithography technique, used here, provides a means to achieve sub-micron features, typically accomplished by using the phase-shift mask technique with a LIGA process and gas assistant imprint process. The light intensity patterns observed using optical microscopy、surface profiler and AFM has provided detailed the near-field irradiance distribution of light intensity by using polycarbonate phase-shift mask.
Then the continuous-phase DOEs were designed by IFTA (Iterative Fourier Transform Algorithm) to simulate the light perturbation. The IFTA design principle is to modulate incident light’s phase on element plane and to arrange the light phase and intensity distribution in diffractive plane, so that the final light intensity perturbation in diffractive plane be similar to the near-field perturbation distribution. The simulated patterns showed good agreement, demonstrating the design DOEs can be applied to the far-field optical lithography to achieve sub wave length results.
Subjects
光微影
無光罩技術
相位偏移光罩
微機電
近場光學
繞射光學元件
Optical lithography
Maskless lithography
Phase mask
LIGA
Near-field optics
DOE
Diffractive optics
Type
thesis
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