Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
Journal
Journal of Applied Physics
Journal Volume
84
Journal Issue
3
Pages
1595-1601
Date Issued
1998
Author(s)
Abstract
InGaAs/GaAs (111)B quantum well p-i-n structures grown by gas source molecular beam epitaxy have been investigated with a photoreflectance technique. Using the reduced mass deduced from experiments, the built-in electric field is obtained from the above band-gap Franz–Keldysh oscillations (FKOs). The strain-induced piezoelectric field is then determined directly from the comparison of the periods of FKOs in different samples. Numerical solutions for exciton transition energies with the experimentally derived potentials are in good agreement with experimental results. Hence, the piezoelectric constant can be determined using the piezoelectric field. The temperature dependences of the quantized energy levels indicate that the influence of temperature on exciton transitions is essentially the same as that of the gaps of the relevant bulk constituent materials.
SDGs
Type
journal article