Stress Studies of GaN epifilms
Date Issued
2007
Date
2007
Author(s)
Wang, Fu-Cing
DOI
en-US
Abstract
In the first part of this thesis, we report the investigation of GaN epifilm by means of the cross-sectional micro-Raman scattering and cathodoluminescence (CL) spectra. We find the direct evidence for the existence of the residual thermal compressive strain along the growth direction in GaN epifilm. This result is useful for the understanding of the depth dependence of the physical properties of GaN epifilm. In the second part, we study patterned GaN grown on sapphire using the micro-Raman scattering and micro-Photoluminescence (PL) spectra. We find the direct evidence that the stress gradually relaxes when measurements approach to the stripe edge and a larger compressive stress relaxes in the smaller patterned stripe.
Subjects
氮化鎵
應力
應變
拉曼
光致螢光
陰極射線螢光
GaN
stress
strain
Raman
Photoluminescence
Cathodoluminescence
Type
thesis