Low frequency noise characterization of CoFeB/MgO/CoFeB MTJ based perpendicular field sensor
Journal
2015 IEEE International Magnetics Conference
Date Issued
2015
Author(s)
Abstract
In a magnetic tunnel junction (MTJ) device, the potential barrier height of the barrier layer, in presence of a bias voltage or an external magnetic field, can be affected by defects present in the barrier layer or at the barrier layer/ferromagnetic (FM) layer interfaces of the device. The defects may have structural as well as magnetic origin. Fluctuations of such defects (with a time scale that corresponds to low frequency regime of 40 Fe 40 B 20 /MgO/ Co 20 Fe 60 B 20 based MTJ devices which have the reference and sensing layer magnetization directions along the out of plane and in plane directions, respectively designed for high sensitive perpendicular magnetic field sensor application.
SDGs
Type
conference paper