Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
Resource
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO
Journal Volume
1
Date Issued
2003
Author(s)
Huang, Wu-Ping
Abstract
It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about /spl sim/10/sup -5/. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at /spl sim/10/sup -4/.
SDGs
Type
conference paper
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