Selective metal parallel shunting inductor and its VCO application
Journal
IEEE Transactions on Circuits and Systems I: Regular Papers
Journal Volume
52
Journal Issue
9
Pages
1811-1818
Date Issued
2005-09
Author(s)
Abstract
The methodology to calculate the parasitic capacitances in differential symmetric inductors will be presented in this paper. Inspired by the proposed methodology, a method called selective metal parallel shunting (SMPS) can move f/sub Qmax/ onto the desired frequency without additional processing steps. Based on the proposed methodology, a customized program is developed to predict Q/sub max/s and f/sub Qmax/s of on-chip inductors. Differential symmetric inductors and spiral ones with planar, all metal parallel shunting (AMPS), and SMPS configurations have been implemented in a 1P4M 0.35-/spl mu/m CMOS process to verify the proposed method. Moreover, three 2.3-2.4 GHz voltage-controlled oscillators (VCOs) using planar, AMPS, and SMPS inductors, have also been realized. The phase noise of the VCO using SMPS inductors can be improved by 9.3 and 6 dB at 100-kHz offset frequency, respectively, compared to the VCOs using planar and AMPS inductors. The proposed SMPS technique can not only be applicable to VCO but also other RF circuits.
SDGs
Type
journal article