Fabrications of Organic/Inorganic Hybrid Solar Cells and Fabrications of P Type Zinc Oxide Thin Film

In the first part of the work (chapter 1 to chapter 3), the fabrications and characteristic of organic/inorganic hybrid solar cell were detailed discussed. Wet-etching n type silicon nanowires were combined into poly(3-hexylthiophene) (P3HT) to form the structure of poly(3-hexylthiophene) (P3HT)/SiNWs organic/inorganic hybrid solar cell. In P3HT/SiNWs structure, we observed the photoinduced charge transfer in P3HT-SiNWs bulk heterojunctions and got 0.36% power conversion efficiency from J-V characteristics of devices under (A.M.1.5) simulated solar illumination (100mW/cm2). Second, we fabricated the structure of 3HT/SiNWs/PCBM organic/inorganic hybrid solar cell by integrating SiNWs into P3HT/[6,6]phenyl-C61-butyric acid methyl ester) (PCBM) bilayer structure. The P3HT/SiNWs/PCBM device not only has the higher charge carrier mobility of inorganic semiconductors than organic materials but also has two separate channels for efficient electron and hole transport, causing its power conversion efficiency increased from 0.36% to 0.7%. Silicon nanowires, acting as an electron transport, can improve the carrier mobility and increase the absorption from visible light spectrum of the device, reflected in the enhancement in power conversion efficiency. n the second part of the work (chapter 4), we reported two method of the solution based fabrications of p type Zinc Oxide thin films. From the first method, the p-ZnO thin films were prepared by spin coating ZnO solutions doped with nitrogen and little amount of Aluminum atoms. From the second method, the p-ZnO thin films were prepared by spin coating ZnO solutions doped with P2O5 powders on the Si substrate. Those samples then progressed in high temperature treatments followed by rapid thermal annealing (RTA) and Excimer Laser to form p-ZnO thin films.