Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect
Details
Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect
Journal
International Electron Device Material Symposium
Date Issued
2011-11
Author(s)
C. H. Chen
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/366360
Type
conference paper
