High growth rate deposition of oriented hexagonal InN films
Journal
Thin Solid Films
Journal Volume
405
Journal Issue
44563
Pages
194-197
Date Issued
2002-02
Author(s)
Yang, Fuh-Hsiang
Jih-Shang Hwang
Chen, Kuei-Hsien
Lee, Tzung-Han
Hwa, Luu-Gen
Abstract
Highly oriented nanocrystalline indium nitride (InN) films were successfully grown on Si(111) substrate. The growth rate of InN film can be enhanced fourfold by a double-zone metal organic chemical vapor deposition system consisting of a high temperature NH3 pre-cracking zone and a low temperature deposition zone. A maximum growth rate of 6 μm/h was achieved due to the high cracking efficiency of NH3. Meanwhile, the growth temperature of the substrate can be varied from 350 to 600 °C, which provides more flexibility for the film structure. While X-ray diffraction revealed the (0001) texture of the film, the high-resolution transmission electron microscopy study concluded the growth of highly oriented nanocrystalline hexagonal InN, which may lead to potential solar cell and optoelectronic applications. © 2002 Elsevier Science B.V. All rights reserved.
Subjects
Indium nitride; MOCVD; Nanostructures; Raman; TEM
Other Subjects
Ammonia; Cracking (chemical); High resolution electron microscopy; Metallorganic chemical vapor deposition; Nanostructured materials; Semiconducting indium compounds; Semiconducting silicon; Solar cells; Substrates; Thermal effects; Transmission electron microscopy; X ray diffraction analysis; Indium nitride (InN) films; Thin films
Type
journal article